Title :
Electromigration of MRAM-customized Cu interconnects with cladding barriers and top cap
Author :
Gajewski, Donald A. ; Meixner, Tom ; Feil, Bill ; Lien, Mitch ; Walls, James
Author_Institution :
Freescale Semicond., Chandler, AZ, USA
Abstract :
This paper demonstrates the electromigration (EM) performance of MRAM-customized Cu interconnects with cladding barriers and top cap. The results show that the barriers and top cap significantly improved the EM performance compared to conventional Cu processes.
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; magnetic storage; magnetoresistive devices; random-access storage; Cu; MRAM top cap; MRAM-customized interconnects; activation energy; cladding barriers; electromigration; flux concentrating cladding; magnetoresistive random access memory; Current density; Current measurement; Dielectric measurements; Electromigration; Electrons; Equations; Heating; Stress measurement; Temperature measurement; Testing;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
DOI :
10.1109/IRWS.2004.1422746
