DocumentCode
3073651
Title
Mechanism of dynamic NBTI of pMOSFETs
Author
Zhu, B. ; Suehle, J.S. ; Bernstein, J.B. ; Chen, Y.
Author_Institution
Maryland Univ., College Park, MD, USA
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
113
Lastpage
117
Abstract
The negative bias temperature instability of pMOSFETs is studied. It is found that there is strong frequency dependence of the parameters shift. At a certain high frequency, the threshold voltage shift is only about half of that generated by DC stress. The possible sources of this dependence are explored. An empirical model is established, based on the reduction of fixed oxide charges. This model is further used to explain some observed phenomena.
Keywords
MOSFET; annealing; interface states; semiconductor device measurement; semiconductor device models; thermal stability; DC stress; dynamic NBTI; fixed oxide charge reduction; interface traps; negative bias temperature instability; pMOSFET; parameter shift frequency dependence; threshold voltage shift; unipolar stress NBTI annealing; Annealing; Degradation; Electron traps; Lead compounds; MOSFETs; Niobium compounds; Silicon; Stress; Threshold voltage; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN
0-7803-8517-9
Type
conf
DOI
10.1109/IRWS.2004.1422751
Filename
1422751
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