Title :
Atomic scale defects involved in NBTI [MOSFET reliability]
Author :
Campbell, J.P. ; Lenahan, P.M. ; Krishnan, A.T. ; Krishnan, S.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that Pb0 centers, and Si/SiO2 interface silicon dangling bond defects, play a major role in the interface state generation process in NBTI.
Keywords :
MOSFET; dangling bonds; electron-hole recombination; interface states; paramagnetic resonance; semiconductor device measurement; semiconductor device reliability; thermal stability; ESR; MOSFET reliability; NBTI; Pb0 centers; SDR; Si-SiO2; atomic scale defects; electron spin resonance; interface silicon dangling bond defects; interface state generation process; negative bias temperature instability; spin dependent recombination; Bonding; Chemicals; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Paramagnetic resonance; Physics; Silicon; Spontaneous emission; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
DOI :
10.1109/IRWS.2004.1422752
