Title :
New hole trapping characterization during NBTI in 65 nm node technology with distinct nitridation processing [MOSFETs]
Author :
Denais, M. ; Bravaix, A. ; Huard, V. ; Parthasarathy, C. ; Bidaud, M. ; Ribes, G. ; Barge, D. ; Vishnubhotla, L. ; Tavel, B. ; Rey-Tauriac, Y. ; Perrier, F. ; Revil, N. ; Arnaud, F. ; Stolk, P.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
We have developed in this work a new characterization methodology which includes stressing and measurement in a single experimental step. This overcomes the influence of the hole detrapping effect in ultra-thin gate-oxides (TOX=1.4-1.6 nm) and enables comparison of gate-oxide nitridation impacts on negative bias temperature instability (NBTI). This new approach offers possibilities to measure the whole degradation and to improve DC NBTI characterization in operating logic circuits.
Keywords :
MOSFET; hole traps; nitridation; semiconductor device measurement; thermal stability; 1.4 to 1.6 nm; 65 nm; DC NBTI characterization; MOSFET; N; NBTI degradation; SiO2-Si; combined stressing/measurement; gate-oxide nitridation NBTI effects; hole trapping/detrapping characterization; logic circuits; negative bias temperature instability; plasma nitridation; ultra-thin gate-oxides; CMOS technology; Capacitance-voltage characteristics; Current measurement; Degradation; MOSFETs; Niobium compounds; Nitrogen; Oxidation; Stress measurement; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
DOI :
10.1109/IRWS.2004.1422753
