Title :
Mobility evaluation in high-k devices [MOSFETs]
Author :
Bersuker, Gennadi ; Zeitzoff, P. ; Sim, J.H. ; Lee, B.H. ; Choi, R. ; Brown, G. ; Young, C.D.
Author_Institution :
Int. SEMATECH, Austin, TX, USA
Abstract :
Fast electron trapping in the high-k gate dielectrics is shown to effectively increase the magnitude of the threshold voltage during the DC measurements of the drain current, which leads to underestimation of the intrinsic channel carrier mobility. An approach based on the pulse Id-Vg technique is proposed to estimate a correction factor to the DC mobility.
Keywords :
MOSFET; carrier mobility; dielectric thin films; electron traps; semiconductor device measurement; DC mobility correction factor; MOSFET; NMOS transistors; drain current DC measurements; fast electron trapping; high-k gate dielectrics; intrinsic channel carrier mobility; pulse Id-Vg technique; threshold voltage magnitude; Current measurement; Dielectric measurements; Electron mobility; Electron traps; High K dielectric materials; High-K gate dielectrics; Particle measurements; Pulse measurements; Threshold voltage; Time measurement;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
DOI :
10.1109/IRWS.2004.1422758
