Title :
Dopant influence on polysilicon capacitor oxide failure
Author :
Towner, Janet M. ; Naughton, John J.
Author_Institution :
AMI Semicond., Pocatello, ID, USA
Abstract :
In this work, we investigate polysilicon capacitor oxide defectivity as a function of dopant contamination in a 0.5 μm mixed signal process. Experiments show that shallow n and p type dopant implants, used to mimic a cross contamination problem discovered in a PECVD cluster tool, can significantly degrade oxide integrity. Various possible mechanisms of the increased defectivity are discussed.
Keywords :
MOS capacitors; doping profiles; plasma CVD; surface contamination; 0.5 micron; PECVD cluster tool; Si-SiO2; capacitor oxide integrity degradation; dopant cross contamination; exposed capacitor oxide surface; integrated capacitors; interpolysilicon capacitive structures; mixed signal process; n type dopant implants; oxide defectivity; p type dopant implants; polysilicon capacitor oxide failure; Ambient intelligence; Boron; Capacitors; Contamination; Dielectrics; Elevators; Implants; Oxidation; Signal processing; Testing;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
DOI :
10.1109/IRWS.2004.1422759
