DocumentCode
3073853
Title
A Comparison Of Hot-electron And Fowler-nordheim Characterization Of Charging Events In A 0.5-μm Cmos Technology
Author
Hook, T.B. ; Watson, K. ; Mittl, S. ; Johnson, C.
Author_Institution
IBM Microelectronics Division
fYear
1996
fDate
13-14 May 1996
Firstpage
164
Lastpage
167
Keywords
CMOS technology; Degradation; Hot carrier effects; Hot carriers; Monitoring; Production; Stress measurement; Testing; Threshold voltage; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN
0-9651577-0-9
Type
conf
DOI
10.1109/PPID.1996.715229
Filename
715229
Link To Document