DocumentCode :
3073853
Title :
A Comparison Of Hot-electron And Fowler-nordheim Characterization Of Charging Events In A 0.5-μm Cmos Technology
Author :
Hook, T.B. ; Watson, K. ; Mittl, S. ; Johnson, C.
Author_Institution :
IBM Microelectronics Division
fYear :
1996
fDate :
13-14 May 1996
Firstpage :
164
Lastpage :
167
Keywords :
CMOS technology; Degradation; Hot carrier effects; Hot carriers; Monitoring; Production; Stress measurement; Testing; Threshold voltage; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715229
Filename :
715229
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3073853
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