DocumentCode :
3073912
Title :
On-wafer probing measurement and optimization of MIM capacitors for integrated passive device application
Author :
Ho-Chuan Lin ; Ming-Fan Tsai ; Lee, Daewoo
Author_Institution :
Adv. Product Design & Testing Dept., Corp. R&D, Siliconware Precision Ind. Co., Ltd., Taichung, Taiwan
fYear :
2012
fDate :
24-26 Oct. 2012
Firstpage :
380
Lastpage :
383
Abstract :
With wireless applications flourish like mobile phone, consumer end products must tend to small form factor development. More functions, less dimension, and high integration are future technology trend in chip package development roadmap. Integrated Passive Device (IPD) has these advantages in SiP and 3DIC applications. IPD technology can integrated more passive circuits/components in one IPD die and reduce SMD components in SiP module. This can reduce SMD components quantity and assembly cost then increase SiP profit margin. In 3DIC field, IPD can be implemented in Silicon interposer to increase signal integrity. In this paper, we use Agilent ADS Momentum and EMpro to design and simulate MIM capacitors and use SPIL IPD process to implement these capacitors. From on-wafer probing measurement results, we can provide good performance capacitors using in wireless applications.
Keywords :
MIM devices; capacitors; 3DIC; Agilent ADS Momentum; EMpro; IPD; MIM capacitors; SiP; chip package development roadmap; integrated passive device; on-wafer probing measurement; optimization; signal integrity; silicon interposer; Capacitors; Copper; Passive circuits; Polymers; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International
Conference_Location :
Taipei
ISSN :
2150-5934
Print_ISBN :
978-1-4673-1635-4
Electronic_ISBN :
2150-5934
Type :
conf
DOI :
10.1109/IMPACT.2012.6420281
Filename :
6420281
Link To Document :
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