DocumentCode :
3073942
Title :
Circuit and silicide impact on the correlation between TLP and ESD (HBM and MM)
Author :
Huang, S.C. ; Lee, J.H. ; Lee, S.C. ; Chen, K.M. ; Song, M.H. ; Chiang, C.Y. ; Chang, Mi-Chang
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin Chu, Taiwan
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
169
Lastpage :
172
Abstract :
Transmission line pulse (TLP) measurements have been shown to correlate well with ESD performance in most cases. However, some recent researches suggested in some cases miscorrelation can happen. A test chip was designed and fabricated in TSMC 0.13 μm technology to test this correlation. We found that in some conditions, TLP measurements (IT2) do not correlate well with ESD testing in both human body and machine models.
Keywords :
correlation methods; electrostatic discharge; integrated circuit testing; semiconductor device testing; 0.13 mm; ESD performance; ESD testing; HBM; IT2; MM; TLP-ESD correlation; human body models; machine models; transmission line pulse measurement; Circuit testing; Current measurement; Driver circuits; Electrostatic discharge; Equations; Inverters; MOS devices; Protection; Silicides; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
Type :
conf
DOI :
10.1109/IRWS.2004.1422766
Filename :
1422766
Link To Document :
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