DocumentCode :
3074024
Title :
Observation of Electrolurninescence and "Soft-breakdown" Effects in Sub-0.5/spl mu/m CMOS with Ultrathin Gate Oxides
Author :
Okandan, M. ; Fonash, Stephen J. ; Awadelkarim, O.O. ; Chan, Y.D.
Author_Institution :
Pennsylvania State University
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
168
Lastpage :
170
Keywords :
Displays; Leakage current; Luminescence; MOS devices; MOSFETs; Microscopy; Plasma applications; Threshold voltage; Transconductance; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715230
Filename :
715230
Link To Document :
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