Title :
Silicon nano-crystals based MOS memory and effects of traps on charge storage characteristics
Author :
Shi, Y. ; Gu, S.L. ; Yuan, X.L. ; Zheng, Y.D. ; Saito, K. ; Ishikuro, H. ; Hiramoto, T.
Author_Institution :
Inst. of Solid State Phys., Nanjing Univ., China
Abstract :
MOS memory device with a silicon nanocrystal based floating gate on a very narrow channel has been fabricated. Large threshold voltage shifts of up to 1V are obtained by applying a small electric field to the tunnel oxide for write/erase operation. Furthermore, charge storage characteristics have been investigated in the MOS diodes, where various interface traps and defects were introduced by thermal annealing treatment
Keywords :
MOS memory circuits; MOSFET; annealing; charge storage diodes; elemental semiconductors; interface states; nanostructured materials; silicon; MOS diodes; MOS memory device; Si; charge storage; defects; floating gate; interface traps; narrow channel; silicon nanocrystals; thermal annealing; threshold voltage shifts; write/erase operation; Annealing; Capacitance-voltage characteristics; Diodes; Electron traps; MOSFET circuits; Nanoscale devices; Nonvolatile memory; Physics; Silicon; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786434
