Title :
Creation of Slow Traps in MOS Capacitors furing RF Plasma Etching
Author :
Tanner, P.G. ; Dimitrijev, S. ; Yeow, Y.T. ; Harrison, H.B.
Keywords :
Capacitance-voltage characteristics; MOS capacitors; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Radio frequency; Voltage; Wet etching;
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
DOI :
10.1109/PPID.1996.715231
