Title :
Parasitic bipolar transistor effect in poly-Si thin film transistor
Author :
Liu, Xiaoyan ; Guan, Xudong ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A simple physical model is developed to describe the parasitic bipolar transistor effect when a polysilicon thin film transistor works in the off state. By using the model, the relations of leakage current with terminal voltage and temperature of the TFT can be obtained
Keywords :
elemental semiconductors; leakage currents; semiconductor device models; silicon; thin film transistors; Si; leakage current; off state; parasitic bipolar transistor effect; physical model; poly-Si thin film transistor; terminal voltage; Bipolar transistors; Charge carrier processes; Electron emission; Grain boundaries; Leakage current; Microelectronics; Silicon; Temperature; Thin film transistors; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786460
