Title :
Effect of Low-Temperature Anneal during Multilevel Metallization Process on Plasma-Induced Oxide Damage
Author :
Noguchi, Ko ; Horiuchi, Tadahiko
Author_Institution :
NEC Corporation
Keywords :
Annealing; Etching; Hot carriers; MOSFETs; Metallization; Monitoring; Plasma applications; Plasma measurements; Plasma properties; Stress;
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
DOI :
10.1109/PPID.1996.715234
