DocumentCode

3074701

Title

Effect of Low-Temperature Anneal during Multilevel Metallization Process on Plasma-Induced Oxide Damage

Author

Noguchi, Ko ; Horiuchi, Tadahiko

Author_Institution

NEC Corporation

fYear

1996

fDate

13-14 May 1996

Firstpage

184

Lastpage

187

Keywords

Annealing; Etching; Hot carriers; MOSFETs; Metallization; Monitoring; Plasma applications; Plasma measurements; Plasma properties; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1996 1st International Symposium on

Print_ISBN

0-9651577-0-9

Type

conf

DOI

10.1109/PPID.1996.715234

Filename

715234