Computer simulation of polysilicon piezoresistive pressure sensors

Author

Xiaowei, Liu ; Xin, Li ; Wei, Wang ; Wang Xilian ; Wei, Che ; Zhenmao, Liu ; Maojun, Fan

Author_Institution

Astronaut. Sch., Harbin Inst. of Technol., China

fYear

1998

fDate

1998

Firstpage

891

Lastpage

894

Abstract

In this paper, the computer simulation of polysilicon piezoresistive pressure sensors is introduced. The stress distribution on Si pressure sensitive membrane is analyzed by the finite-element method (FEM). The arrangement of polysilicon resistors, the geometrical size of the rectangular membrane and the temperature effect on the sensitivity of the sensors are considered. Among the eight possible patterns, the best one is pattern 8 for its highest output under the same pressure. It is also found that the sensitivity of the sensor will increase with the increase of the longitude/width ratio of the membrane. The simulation results can be used for optimizing the sensor design

Keywords

elemental semiconductors; finite element analysis; membranes; microsensors; piezoresistive devices; pressure sensors; semiconductor device models; silicon; thin film resistors; Si; Wheatstone bridge; computer simulation; finite-element method; geometrical size; longitude/width ratio; polysilicon piezoresistive pressure sensors; polysilicon resistors arrangement; polysilicon strain gauges; pressure sensitive membrane; rectangular membrane; sensitivity; sensor design optimisation; stress distribution; temperature effect; Biomembranes; Bridge circuits; Capacitive sensors; Computational modeling; Computer simulation; Mechanical sensors; Piezoresistance; Silicon; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.786503

Filename

786503