A new release process in surface micromachining-double mask technology

Author

Yilong, Hao ; Ting, Li ; Liu, Shimei ; Dayu, Tian ; Kui, Luo ; Ke, Deng ; Tiesong, Wang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

1998

fDate

1998

Firstpage

899

Lastpage

902

Abstract

This paper presents a new process for releasing micromechanical structures in surface micromachining with polysilicon support and LPCVD Si₃N₄ embedded mask for one polysilicon layer process, which is CMOS compatible and can be adjusted to be suitable for the structure stiffness by changing the distance between two supports. This process may be used for multipolysilicon layer process. The results of test structures show that this process may be a good technology to eliminate the sticking of microstructures to the substrate during the wafer drying after the sacrificial etching process

Keywords

chemical vapour deposition; etching; masks; micromachining; CMOS compatible; LPCVD Si₃N₄ embedded mask; Si; Si₃N₄; double mask technology; freestanding microstructures; micromechanical structures; multipolysilicon layer process; one polysilicon layer process; polysilicon support; release process; sacrificial etching; substrate sticking elimination; surface micromachining; wafer drying; Annealing; CMOS process; Chemical technology; Chemical vapor deposition; Dry etching; Microelectronics; Micromachining; Microstructure; Resists; Structural beams;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.786509

Filename

786509