Title :
New physics-based compact electro-thermal model of power diode dedicated to circuit simulation
Author :
Mawby, P.A. ; Igic, P.M. ; Towers, MS
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
Abstract :
A physically based compact device model of the PIN diode is presented. A new 1D module for the drift zone (low doped n-base region) is presented which correctly describes static and dynamic behavior of the power diode. This incorporates conductivity modulation and non-quasistatic charge storage effect. Finally, this electric model is transformed into a electrothermal model by adding an extra node (thermal node) to the electrical compact model. This thermal node stores information about junction temperature of the active device and it represents a connection between the device and the rest of the circuit thermal network
Keywords :
carrier density; carrier lifetime; circuit simulation; equivalent circuits; finite element analysis; leakage currents; p-i-n diodes; power semiconductor diodes; semiconductor device models; 1D module; FEM; PIN diode; active device; ambipolar diffusion equation; carrier concentration; circuit simulation; compact model; conductivity modulation; drift zone; dynamic behavior; equivalent circuit; junction temperature; leakage current; low doped n-base region; nonquasistatic charge storage effect; physics-based compact electrothermal model; power diode; static behavior; thermal RC network; thermal node; Circuit simulation; Cooling; Diodes; Electronic packaging thermal management; Heat transfer; Poles and towers; Predictive models; Resistance heating; Temperature dependence; Transient analysis;
Conference_Titel :
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6685-9
DOI :
10.1109/ISCAS.2001.921332
