A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications

Author

Polleux, J.L. ; Moutier, F. ; Billabert, A-L. ; Rumelhard, C. ; Sonmez, E. ; Schumacher, H.

Author_Institution

Commun. Syst. Lab., ESYCOM, France

fYear

2003

fDate

10-12 Sept. 2003

Firstpage

113

Lastpage

116

Abstract

A strained-SiGe heterojunction bipolar phototransistor is presented for the first time. Theoretical demonstration of the device is recalled. Practical measurements at 940 nm are presented. A dc phototransistor mode responsivity of 1.49 A/W is achieved. Tools are proposed for the opto-microwave behavior analyses of photodetectors. A frequency behavior reaching 32 GHz with a -70 dBm output level and a 200 μW input optical power is demonstrated.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave photonics; photodetectors; phototransistors; 200 muW; 32 GHz; 940 nm; SiGe; dc phototransistor mode responsivity; heterojunction bipolar phototransistor; optomicrowave behavior; photodetectors; short-range optomicrowave applications; strained SiGe layer; Frequency; Germanium alloys; Germanium silicon alloys; Heterojunctions; Microwave devices; Optical fiber communication; Optical films; Optical interconnections; Phototransistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2003. MWP 2003 Proceedings. International Topical Meeting on

Print_ISBN

0-7803-8691-4

Type

conf

DOI

10.1109/MWP.2003.1422840

Filename

1422840

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3075316