Extracting a polynomial ac FET model with thermal couplings from S-parameter measurements

Author

Vuolevi, Joel ; Rahkonen, Timo

Author_Institution

Dept. of Electr. Eng., Oulu Univ., Finland

Volume

3

fYear

2001

fDate

6-9 May 2001

Firstpage

461

Abstract

To simulate the linearity properties of RF FET amplifiers operating at moderate signal levels, this paper extends small-signal FET modelling and characterization to include the effects of nonlinearities. Pulsed S-parameter measurements are employed to avoid the problem of self-heating and to characterise electro-thermal distortion mechanisms. The extracted nonlinear ac model can be used in Volterra analysis to gain an insight into distortion mechanisms

Keywords

S-parameters; Volterra equations; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device models; RF FET amplifiers; Volterra analysis; distortion mechanisms; electro-thermal distortion mechanisms; linearity properties; nonlinearities; polynomial ac FET model; pulsed S-parameter measurements; small-signal FET modelling; thermal couplings; FETs; Linearity; Nonlinear distortion; Polynomials; Pulse amplifiers; Pulse measurements; RF signals; Radio frequency; Radiofrequency amplifiers; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6685-9

Type

conf

DOI

10.1109/ISCAS.2001.921347

Filename

921347