Title :
High-temperature pressure and temperature multi-function sensors
Author :
Liu Xiaowei ; Wei, Wang ; Xilian, Wang ; Yuqiang, Liu ; Zhenmao, Liu ; Maojun, Fan
Author_Institution :
Harbin Inst. of Technol., China
Abstract :
High-temperature pressure and temperature multi-function sensors have been fabricated using polysilicon as piezoresistor and silver resistors as thermometer. The polysilicon SOI structure is able to operate at high temperature. Over the range of room temperature to 350°C, the pressure and temperature properties of the sensors have been measured. For 0.6 Mpa full scale pressure, the typical pressure sensitivity is 4.42 mV/V/MPa at 27°C and 3.32 mV/V/MPa at 352°C, with temperature coefficient of -0.077%°C-1. The silver thermometer has the temperature coefficient of +0.242%°C-1, with good linearity
Keywords :
elemental semiconductors; high-temperature techniques; piezoresistive devices; pressure sensors; silicon; silicon-on-insulator; temperature sensors; thin film resistors; 0.6 MPa; 25 to 350 C; 27 C; 352 C; Ag; Si; Si-SiO2; Wheatstone bridge; high temperature multifunction sensors; linearity; piezoresistive sensors; piezoresistor; polysilicon SOI structure; pressure sensitivity; pressure sensors; silver resistors; temperature sensors; thermometer; Linearity; Piezoresistance; Piezoresistive devices; Pressure measurement; Resistors; Sensor phenomena and characterization; Silicon; Silver; Temperature sensors; Thermal sensors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786537
