DocumentCode
3075892
Title
The Degradation of MOS Devices by Source/Drain Ion Impantation
Author
Lee, Sangdon ; Son, Jeonghwan ; Yoon, Jaeseog ; Huh, Kijae ; Yang, Dooyoung
Author_Institution
LG Semicon Co., Ltd.
fYear
1996
fDate
13-14 May 1996
Firstpage
210
Lastpage
212
Keywords
Degradation; Leakage current; MOS capacitors; MOS devices; MOSFET circuits; Plasma applications; Plasma properties; Plasma sources; Tunneling; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN
0-9651577-0-9
Type
conf
DOI
10.1109/PPID.1996.715240
Filename
715240
Link To Document