Title :
InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product
Author :
Ker, Pin Jern ; Marshall, Andrew R J ; Krysa, Andrey B. ; David, John P R ; Tan, Chee Hing
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively.
Keywords :
III-V semiconductors; avalanche photodiodes; electron avalanches; indium compounds; submillimetre wave diodes; InAs; InAs electron avalanche photodiodes; avalanche gain; bandwidth 430 GHz; bandwidth 580 GHz; gain-bandwidth product; temperature 293 K to 298 K; temperature 77 K; Avalanche photodiodes; Bandwidth; Gain; Gain measurement; Masers; P-i-n diodes; Temperature measurement;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
DOI :
10.1109/OECC.2012.6276450
