DocumentCode :
3076155
Title :
The impact of optical illumination on the breakdown characteristics of pHEMTs
Author :
Bourhill, N. ; Iezekiel, Stavros ; Steenson, D.P.
Author_Institution :
Sch. of Electron. & Electr. Eng., Leeds Univ., UK
fYear :
2003
fDate :
10-12 Sept. 2003
Firstpage :
259
Lastpage :
262
Abstract :
The impact of optical illumination on the breakdown characteristics of pHEMTs is investigated for the first time. Illumination is found to influence deep-level trap related currents in the pHEMTs under test when VDS > 2V.
Keywords :
deep levels; electric breakdown; electron traps; high electron mobility transistors; hole traps; lighting; photovoltaic effects; breakdown characteristics; deep-level trap; optical illumination; pHEMT; Avalanche breakdown; Electric breakdown; Electron traps; Gallium arsenide; Lighting; Microwave photonics; PHEMTs; Testing; Vertical cavity surface emitting lasers; Virtual manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Photonics, 2003. MWP 2003 Proceedings. International Topical Meeting on
Print_ISBN :
0-7803-8691-4
Type :
conf
DOI :
10.1109/MWP.2003.1422894
Filename :
1422894
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3076155
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