Title :
Process stability control of Pb(Zr,Ti)O3 ferroelectric thin film sputtering for FRAM application
Author :
Suu, K. ; Masuda, T. ; Nishioka, Y. ; Tani, N.
Author_Institution :
Inst. for Super Mater., ULVAC Japan Ltd., Chiba, Japan
Abstract :
Pb(Zr,Ti)O3 (PZT) thin films have been fabricated by RF magnetron sputtering. Aiming at productional process development for ferroelectric RAM application, PZT films have been deposited on 6-inch substrates using a 12-inch ceramic target. High deposition rates up to 100 nm/min have been realized by utilizing a high-density PZT target. Flexible compositional control has been achieved by controlling sputtering conditions. A newly introduced electro-static chuck (ESC) type substrate cooling system has been found effective to improve stability of film composition of PZT sputtering
Keywords :
ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; random-access storage; sputter deposition; FRAM application; PZT; Pb(Zr,Ti)O3 ferroelectric thin film sputtering; PbZrO3TiO3; RF magnetron sputtering; compositional control; electro-static chuck type substrate cooling system; film composition; high deposition rates; high-density PZT target; process stability control; sputtering conditions; stability; Ceramics; Cooling; Ferroelectric films; Nonvolatile memory; Process control; Radio frequency; Random access memory; Sputtering; Stability; Substrates;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786626
