Title :
Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non-destructive readout memory devices
Author :
Kim, Y.T. ; Lee, C.W. ; Shin, D.S. ; Lee, H.N.
Author_Institution :
Semicond. Mater. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
Current and voltage characteristics of MEFISFETs using different insulators show that CeO2 or Y2O3 insulator performs an excellent role to prevent the reduction of coercive field in the SrBi2Ta2O9 (SBT) film and the interaction between the SBT and Si. The memory window of the MEFISFET using CeO2 or Y2O3 insulator is about 1.25 V at the gate voltage of 5 V, and its drain current level (write/read state) is 10-4 A. Whereas, the memory window of the MEFISFET using SiO2 is 0.25 V at the same gate voltage and the drain current level is only 10-6 A
Keywords :
MISFET; bismuth compounds; cerium compounds; ferroelectric storage; ferroelectric thin films; strontium compounds; yttrium compounds; 1E-4 A; 5 V; CeO2; MEFISFET nondestructive readout memory devices; Si; SiO2; SrBi2Ta2O9; Y2O3; coercive field; current characteristics; drain current level; gate voltage; insulator effect; memory window; metal-ferroelectric-insulator-semiconductor-field effect transistor; voltage characteristics; Capacitors; Dielectrics and electrical insulation; Ferroelectric films; Ferroelectric materials; Metal-insulator structures; Nonvolatile memory; Random access memory; Semiconductor films; Substrates; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786630
