Title :
Dielectric property of BaTiO3-SrTiO3 artificially modulated structure made by MBE
Author :
Tsurumi, T. ; Miyasou, T. ; Ishibashi, Y. ; Ohashi, N.
Author_Institution :
Dept. of Inorg. Mater., Tokyo Inst. of Technol., Japan
Abstract :
In order to elucidate the origin of the asymmetry observed in the D-E or C-V hysteresis loops of BaTiO3(BTO)-SrTiO3(STO) epitaxial films, “artificially modulated structures” (AMSs), where the chemical composition was continuously changed along the direction of film thickness, were prepared and their dielectric properties were measured. A fully automatic molecular beam epitaxy system was developed to fabricate AMSs. The simulation of XRD profiles indicated that a relaxation of the crystal lattice occurred along the a-axis in the two AMSs. It was observed that the asymmetry of the C-V hysteresis loop was changed by the modulation, and that the origin of the asymmetry was attributed to the lattice relaxation rather than the asymmetry of the stress field
Keywords :
X-ray diffraction; barium compounds; dielectric hysteresis; dielectric relaxation; epitaxial layers; ferroelectric materials; ferroelectric thin films; molecular beam epitaxial growth; strontium compounds; BaTiO3-SrTiO3; BaTiO3-SrTiO3 artificially modulated structure; C-V hysteresis loop; MBE; chemical composition; crystal lattice; dielectric property; film thickness; lattice relaxation; relaxation; Capacitance-voltage characteristics; Chemical technology; Dielectrics; Fabrication; Ferroelectric materials; Hysteresis; Lattices; Molecular beam epitaxial growth; Stress; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786633
