Title :
Properties of Sr2Nb2O7 family ferroelectric thin films
Author :
Fujimori, Y. ; Nakamura, T. ; Kamisawa, A.
Author_Institution :
Div. of Process Technol., Rohm Co. Ltd., Kyoto, Japan
Abstract :
Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistor (FET)s, because these substances have a low dielectric constant, low coercive field and high heat resistance. In this study, we succeeded in operating Sr2(Ta,Nb)2O 7 (STN) capacitors on polycrystalline silicon (poly-Si). From secondary ion mass spectroscopy (SIMS) profiles, no-interdiffusion in the STN metal ferroelectric metal insulator semiconductor (MFMIS) structure was confirmed. C-V and ID-VG hysteresis curves which were dependent on ferroelectric polarization were obtained. These capacitors were applied to floating gate type ferroelectric random access memory (FFRAM) cells. The degradation in ferroelectricity of STN capacitors during FFRAM cell fabrication process was not observed. We succeeded in operating FFRAM cells with a lower voltage than that required for PZT
Keywords :
dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric materials; ferroelectric storage; ferroelectric thin films; permittivity; strontium compounds; thin film capacitors; SIMS; Sr2Nb2O7; ferroelectric memory field effect transistor; ferroelectric polarization; ferroelectric thin films; floating gate type ferroelectric random access memory; high heat resistance; hysteresis curves; low coercive field; low dielectric constant; Capacitors; Dielectric constant; FETs; Ferroelectric materials; Mass spectroscopy; Metal-insulator structures; Niobium; Resistance heating; Silicon; Strontium;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786635
