Electrical characterization of ferroelectric YMnO3 films for MF(I)S-FET application

As a new ferroelectric material especially for MFSFET´s, we have proposed REMnO₃ (RE:rare earth element), and succeeded to obtain epitaxial films on sapphire and MgO, and oriented films on Pt/sapphire and Si using YMnO₃ (YMO). The most recent paper described that the YMO on Si with Y-Mn-O buffer layer showed distinct ferroelectric C-V hysteresis with the memory window of 1.1 V, however, the C-V behavior had strong sweeping rate dependence. This paper discusses why the YMO/Si with Y-Mn-O buffer layer shows poor ferroelectric properties, and also shows the improvement of the properties YMO by using Y₂O₃ buffer layer