Title :
Electrical characterization of ferroelectric YMnO3 films for MF(I)S-FET application
Author :
Fujimura, Norifumi ; Yoshimura, Takeshi ; Ito, Taichiro
Author_Institution :
Coll. of Eng., Osaka Prefecture Univ., Japan
Abstract :
As a new ferroelectric material especially for MFSFET´s, we have proposed REMnO3 (RE:rare earth element), and succeeded to obtain epitaxial films on sapphire and MgO, and oriented films on Pt/sapphire and Si using YMnO3 (YMO). The most recent paper described that the YMO on Si with Y-Mn-O buffer layer showed distinct ferroelectric C-V hysteresis with the memory window of 1.1 V, however, the C-V behavior had strong sweeping rate dependence. This paper discusses why the YMO/Si with Y-Mn-O buffer layer shows poor ferroelectric properties, and also shows the improvement of the properties YMO by using Y2O3 buffer layer
Keywords :
MISFET; dielectric hysteresis; ferroelectric materials; ferroelectric thin films; yttrium compounds; 1.1 V; Al2O3; C-V behavior; MF(I)S-FET application; MFSFET; MgO; REMnO3; YMnO3; electrical characterization; epitaxial films; ferroelectric YMnO3 films; oriented films; strong sweeping rate dependence; Buffer layers; Capacitance-voltage characteristics; Dielectric measurements; Electrodes; Ferroelectric films; Ferroelectric materials; Hysteresis; Performance evaluation; Polarization; Semiconductor films;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786641
