DocumentCode :
3077321
Title :
Ferroelectric PZT thin films on metallic substrates: preparation and properties as actor and sensor element
Author :
Seifert, S. ; Beige, H. ; Giersbach, M. ; Hauke, T. ; Löbmann, P. ; Sporn, D.
Author_Institution :
Fraunhofer-Inst. fur Silicatforschung, Wurzburg, Germany
fYear :
1998
fDate :
1998
Firstpage :
85
Lastpage :
88
Abstract :
Electromechanical properties of PZT thin films on metallic substrates have been investigated for different substrate geometries. The PZT thin films with high single layer thicknesses of about 0,9 μm have been prepared by modified sol-gel processing. The films show a high remanent polarization of about 30 μC/cm2 and strains up to 0.4%, the piezoelectric modulus was 60 pC/N and the dielectric permittivity of about 400. By applying a voltage below the coercivity of a poled sample 50 mm in length, the deflection of the sample tip can be controlled linearly between ±0.3 μm. In the first mechanical resonance mode the vibration of the sample tip can be observed by the naked eye. The dependence of the mechanical resonance frequencies on the cantilever dimensions is in a good agreement with the mechanical bending theory. The charge generated by a quasistatic mechanically bending of the bimorph was investigated as a function of the average curvature
Keywords :
dielectric polarisation; ferroelectric devices; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; piezoelectric actuators; piezoelectric transducers; sol-gel processing; 0.9 mum; 50 mm; PZT; PZT thin films; PbZrO3TiO3; actuator element; bimorph; cantilever dimensions; coercivity; dielectric permittivity; electromechanical properties; ferroelectric PZT thin films; high remanent polarization; high single layer thickness; mechanical bending theory; mechanical resonance frequencies; mechanical resonance mode; metallic substrates; piezoelectric modulus; preparation; sensor element; sol-gel processing; strains; substrate geometries; Capacitive sensors; Dielectrics; Ferroelectric films; Ferroelectric materials; Geometry; Permittivity; Piezoelectric films; Piezoelectric polarization; Resonance; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
ISSN :
1099-4734
Print_ISBN :
0-7803-4959-8
Type :
conf
DOI :
10.1109/ISAF.1998.786642
Filename :
786642
Link To Document :
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