• DocumentCode
    3077360
  • Title

    Clamping of piezoelectric thin films on metallic substrates: influence on the effective piezoelectric modulus d33

  • Author

    Steinhausen, R. ; Hauke, T. ; Seifert, W. ; Mueller, V. ; Beige, H. ; Seifert, S. ; Löbmann, P.

  • Author_Institution
    FB Phys., Martin-Luther-Univ., Halle-Wittenberg, Germany
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    93
  • Lastpage
    96
  • Abstract
    The piezoelectric properties of ferroelectric thin films can strongly be influenced by mechanical clamping on the surrounding media, i.e. the substrate, the electrode as well as the surrounding unpoled film. The influence of these effects on the measurement of the piezoelectric modulus d33 is investigated. A Finite Element Method (FEM) modeling using coefficients of bulk materials for PZT at the morphotropic phase boundary shows that for common film and substrate dimensions the measurable piezoelectric modulus d33,m can reach only 50% of the value under free conditions. The films can be regarded as perfectly laterally clamped. This is caused mainly by the clamping on the substrate. The contribution of the substrate to the total change of sample thickness is calculated. The calculations are compared to experimental results from PZT (53/47) films prepared on metallic substrates
  • Keywords
    ferroelectric materials; ferroelectric thin films; finite element analysis; lead compounds; piezoelectric materials; piezoelectric thin films; FEM modeling; PZT; PbZrO3TiO3; clamping; effective piezoelectric modulus; ferroelectric thin films; finite element method; laterally clamped film; mechanical clamping; metallic substrates; morphotropic phase boundary; piezoelectric modulus; piezoelectric thin films; sample thickness; Clamps; Electrodes; Ferroelectric films; Ferroelectric materials; Finite element methods; Mechanical factors; Phase measurement; Piezoelectric films; Piezoelectric materials; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
  • Conference_Location
    Montreux
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-4959-8
  • Type

    conf

  • DOI
    10.1109/ISAF.1998.786644
  • Filename
    786644