Title :
Influence of ion implantation on the ferroelectric properties of Pb(Zr,Ti)O3 films
Author :
Biegel, W. ; Worz, B. ; Hanika, M. ; Klarmann, R. ; Kuhn, M. ; Schey, B. ; Stritzker, B.
Author_Institution :
Inst. fur Phys., Augsburg Univ., Germany
Abstract :
Pulsed laser deposition (PLD) was used to deposit Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) thin films on YBa 2Cu3O7-x (YBCO)//MgO and on technical substrates (high-grade steel Hastelloy). As a typical characterization of ferroelectric materials the P(E) hysteresis loop reflects the mobility of ferroelectric domain walls. We investigate the influence of ion implantation on the ferroelectric behaviour of thin PZT-films produced by PLD. The species of implanted ions (O+,Ca+ ) and the doses (1014-1016 cm-2, 180 keV) were varied to study the influence of the introduced atoms and defects on the ferroelectric properties. The films were investigated by XRD, RBS/Channeling and a RT-66A ferroelectric tester. The influence of thermal treatment of the implanted PZT-films on their ferroelectric properties will be discussed above the background of the induced structural defects and the implanted ions itself
Keywords :
Rutherford backscattering; X-ray diffraction; calcium; channelling radiation; crystal defects; dielectric hysteresis; electric domain walls; ferroelectric thin films; heat treatment; ion implantation; lanthanum compounds; lead compounds; oxygen; pulsed laser deposition; 180 keV; MgO; PLZT; PZT; PbLaZrO3TiO3; PbZrO3TiO3; RBS; XRD; YBa2Cu3O7; channeling; ferroelectric domain wall mobility; hysteresis loop; induced structural defects; ion implantation; pulsed laser deposition; thermal treatment; thin films; Ferroelectric films; Ferroelectric materials; Hysteresis; Ion implantation; Optical pulses; Pulsed laser deposition; Sputtering; Steel; X-ray scattering; Yttrium barium copper oxide;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786647
