Title :
Refinement of Pb(Zr,Ti)O3 thin films grown by MOCVD
Author :
Shimizu, M. ; Yoshida, M. ; Fujisawa, H. ; Niu, H.
Author_Institution :
Dept. of Electron., Himeji Inst. of Technol., Hyogo, Japan
Abstract :
In the MOCVD (metalorganic chemical vapor deposition) process of Pb(Zr,Ti)O3 (PZT) thin films, effects of the purity of Pb and Zr source precursors on the electrical properties were investigated. PZT thin films grown using high purity source precursors showed lower current densities, higher breakdown electric fields and better switching endurance characteristics than those of PZT thin films grown using low purity source precursors. These experimental results imply that refinement of source precursors is one of most important factors for improving electrical properties of ferroelectric thin films, as is the case in the growth of semiconductor thin films
Keywords :
MOCVD coatings; electric breakdown; ferroelectric ceramics; ferroelectric switching; ferroelectric thin films; lead compounds; zirconium compounds; MOCVD thin films; PZT; PbZrO3TiO3; breakdown electric fields; electrical properties refinement; ferroelectric thin films; metalorganic chemical vapor deposited films; source precursors; switching endurance; Dielectric thin films; Electric breakdown; Impurities; Lead; MOCVD; Neodymium; Semiconductor thin films; Sputtering; Transistors; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786655
