DocumentCode
3077556
Title
Refinement of Pb(Zr,Ti)O3 thin films grown by MOCVD
Author
Shimizu, M. ; Yoshida, M. ; Fujisawa, H. ; Niu, H.
Author_Institution
Dept. of Electron., Himeji Inst. of Technol., Hyogo, Japan
fYear
1998
fDate
1998
Firstpage
139
Lastpage
142
Abstract
In the MOCVD (metalorganic chemical vapor deposition) process of Pb(Zr,Ti)O3 (PZT) thin films, effects of the purity of Pb and Zr source precursors on the electrical properties were investigated. PZT thin films grown using high purity source precursors showed lower current densities, higher breakdown electric fields and better switching endurance characteristics than those of PZT thin films grown using low purity source precursors. These experimental results imply that refinement of source precursors is one of most important factors for improving electrical properties of ferroelectric thin films, as is the case in the growth of semiconductor thin films
Keywords
MOCVD coatings; electric breakdown; ferroelectric ceramics; ferroelectric switching; ferroelectric thin films; lead compounds; zirconium compounds; MOCVD thin films; PZT; PbZrO3TiO3; breakdown electric fields; electrical properties refinement; ferroelectric thin films; metalorganic chemical vapor deposited films; source precursors; switching endurance; Dielectric thin films; Electric breakdown; Impurities; Lead; MOCVD; Neodymium; Semiconductor thin films; Sputtering; Transistors; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location
Montreux
ISSN
1099-4734
Print_ISBN
0-7803-4959-8
Type
conf
DOI
10.1109/ISAF.1998.786655
Filename
786655
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