Title :
An investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation
Author :
Friessnegg, T. ; Aggarwal, S. ; Nielsen, B. ; Ramesh, R. ; Keeble, D.J. ; Poindexter, E.H.
Author_Institution :
Maryland Univ., College Park, MD, USA
Abstract :
The formation of vacancy-type defects in Pb(1-x)Lax(Zr0.2Ti0.8)O 3 (PLZT) thin films was studied as a function of lanthanum doping x and after cooling in an oxygen reduced ambient. The Doppler-broadening S parameter indicates that Pb-vacancies are progressively introduced upon La-doping. Cooling of Pb(Zr0.2Ti0.8)O3 and Pb0.9La 0.1(Zr0.2Ti0.8)O3 thin films in 10-5 Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are lead-oxygen vacancy complexes
Keywords :
Doppler broadening; ferroelectric materials; ferroelectric thin films; lanthanum compounds; lead compounds; positron annihilation; vacancies (crystal); (Pb,La)(Zr,Ti)O3 thin films; 1E-5 torr; 760 torr; Doppler-broadening; PLZT; Pb(Zr0.2Ti0.8)O3; Pb-vacancies; Pb(1-x)Lax(Zr0.2Ti0.8 )O3; Pb0.9La0.1(Zr0.2Ti0.8 )O3 thin films; PbLaZrO3TiO3; lanthanum doping; lead-oxygen vacancy complexes; positron annihilation; vacancy-related defects; vacancy-type defects; Cooling; Doping; Ferroelectric films; Laboratories; Lanthanum; Lead; Positrons; Scattering parameters; Spectroscopy; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786657
