Title :
Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metal organic solution deposition technique
Author :
Hu, G.D. ; Xu, J.B. ; Wilson, I.H. ; Cheung, W.Y. ; Ke, N. ; Chan, W.K. ; Wong, S.P.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
Abstract :
Ferroelectric SrBi2Ta2O9 (SBT) thin films with 20 mol% excess Bi content have been deposited on the Bi 4Ti3O12 (BTO) buffered Pt/Ti/SiO2 /Si substrates using the metal organic solution deposition (MOSD) technique at annealing temperatures ranging from 650°C to 750°C. The BTO single buffer layer with different excess Bi content (0 mol%, 20 mol% and 40 mol%) was prepared by the same deposition method. No pyrochlore phase was found in the SBT thin films although the Bi2 Ti2O7 phase appeared in the BTO buffer layer. The effects of the BTO buffer layer and post annealing temperature on the dielectric and ferroelectric properties of SBT thin films were analyzed
Keywords :
annealing; bismuth compounds; ferroelectric materials; ferroelectric thin films; liquid phase deposition; stoichiometry; strontium compounds; 650 to 750 C; BTO single buffer layer; Bi2Ti2O7 phase; Bi4Ti3O12; Bi4Ti3O12 buffer layer; Pt-Ti-SiO2-Si; Pt/Ti/SiO2/Si substrates; SBT thin films; Si; SrBi2Ta2O9; SrBi2Ta2O9 thin films; annealing temperature; dielectric properties; excess Bi content; ferroelectric SrBi2Ta2O9 thin films; ferroelectric properties; metal organic solution deposition technique; post annealing temperature; Bismuth; Buffer layers; Darmstadtium; Ferroelectric films; Ferroelectric materials; Rapid thermal annealing; Sputtering; Substrates; Temperature distribution; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786661
