Title :
Stability of Pt/metal bilayer metallizations on SiO2/Si and TiN/Si substrates
Author :
Jain, Rajni ; Fahim, M. ; Gupta, V. ; Jagdish, C. ; Sreenivas, K.
Author_Institution :
Dept. of Phys. & Astrophys., Delhi Univ., India
Abstract :
The stability of sputtered platinum/metal bilayer metallization systems (where metal=Ti, Cr, or Ta) deposited onto SiO2/Si and TiN/Si substrates has been investigated for their resistance to oxidation in the temperature range 500 to 800°C in O2. RBS and SEM techniques have been used to study the interface reactions and surface morphology. Simple metallic bilayer combinations of Pt/Ti, Pt/Cr, and Pt/Ta on SiO2/Si substrates are found to be unstable. A complex Pt/TiO2/Ti/SiO2/Si structure offers good stability and can be grown without any heating using a thin TiO2 layer and a bias sputtered Pt film. On TiN diffusion barrier layers, the Pt/TiN/Si system is unstable. Thin Ta layers in the Pt/Ta/TiN/Si structure, reduce the interdiffusion and minimize the degradation, but the surface morphology of Pt is rough
Keywords :
Rutherford backscattering; chemical interdiffusion; chromium; diffusion barriers; integrated circuit metallisation; oxidation; platinum; scanning electron microscopy; sputtered coatings; surface structure; tantalum; titanium; 500 to 800 degC; Pt-Cr; Pt-Ta; Pt-Ti; RBS; SEM; SiO2-Si; SiO2/Si substrate; TiN-Si; TiN/Si substrate; bilayer metallization; diffusion barrier layers; interdiffusion; interface reactions; oxidation resistance; surface morphology; Chromium; Metallization; Oxidation; Platinum; Stability; Substrates; Surface morphology; Surface resistance; Temperature distribution; Tin;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786662
