• DocumentCode
    3077733
  • Title

    Characterization of APDs fabricated by 0.18 μm CMOS process in blue wavelength region

  • Author

    Shimotori, Toshiyuki ; Maekita, Kazuaki ; Maruyama, Takeo ; Iiyama, Koichi

  • Author_Institution
    Div. of Electr. & Comput. Eng., Kanazawa Univ., Ishikawa, Japan
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    509
  • Lastpage
    510
  • Abstract
    A silicon avalanche photodiode fabricated by CMOS process was characterized at 405 nm wavelength for Blu-ray applications. The avalanche gain of 36, the maximum responsivity of 2.61 A/W, and the bandwidth of 300 MHz were achieved.
  • Keywords
    CMOS integrated circuits; avalanche photodiodes; elemental semiconductors; silicon; APD fabrication; Blu-ray applications; CMOS process; Si; avalanche gain; blue wavelength region; silicon avalanche photodiode; size 0.18 mum; wavelength 405 nm; Avalanche photodiodes; Bandwidth; CMOS process; Electronic circuits; Silicon; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2012 17th
  • Conference_Location
    Busan
  • ISSN
    2166-8884
  • Print_ISBN
    978-1-4673-0976-9
  • Electronic_ISBN
    2166-8884
  • Type

    conf

  • DOI
    10.1109/OECC.2012.6276546
  • Filename
    6276546
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3077733