Title :
Characterization of APDs fabricated by 0.18 μm CMOS process in blue wavelength region
Author :
Shimotori, Toshiyuki ; Maekita, Kazuaki ; Maruyama, Takeo ; Iiyama, Koichi
Author_Institution :
Div. of Electr. & Comput. Eng., Kanazawa Univ., Ishikawa, Japan
Abstract :
A silicon avalanche photodiode fabricated by CMOS process was characterized at 405 nm wavelength for Blu-ray applications. The avalanche gain of 36, the maximum responsivity of 2.61 A/W, and the bandwidth of 300 MHz were achieved.
Keywords :
CMOS integrated circuits; avalanche photodiodes; elemental semiconductors; silicon; APD fabrication; Blu-ray applications; CMOS process; Si; avalanche gain; blue wavelength region; silicon avalanche photodiode; size 0.18 mum; wavelength 405 nm; Avalanche photodiodes; Bandwidth; CMOS process; Electronic circuits; Silicon; Standards;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
DOI :
10.1109/OECC.2012.6276546
