Title :
Oxide thin film heterostructure IR detector
Author :
Xu, Y.Q. ; Ignatiev, A. ; Wu, N.J.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
Abstract :
Pyroelectric Mn and Sb doped-Pb(Zr,Ti)O3(PMSZT)/YBa2Cu3O 7-y (YBCO) thin film heterostructure has been integrated with Si using a YSZ buffer layer. Their pyroelectric properties and IR responsivity have been studied. Doping of the PZT with Mn and Sb was used to tune the ferroelectric transition temperatures to lower values, and hence to modify the pyroelectric and dielectric properties of the pyroelectric materials. PMSZT thin films show a high pyroelectric coefficient p of 45 nC/cm2K, and high figures of merit for the PMSZT/YBCO heterostructure, Fi of 15.3×10-9 C·cm/J, Fv of 1768 cm2/C and Fd of 0.048 (cm3/J)1/2 at 25°C. Enhancement of detectivity was attempted by integrating a YBCO air-bridge into the detector design for increased thermal isolation of the detector from the substrate
Keywords :
antimony; barium compounds; ferroelectric Curie temperature; ferroelectric materials; ferroelectric thin films; ferroelectric transitions; high-temperature superconductors; infrared detectors; lead compounds; manganese; pyroelectric detectors; superconducting junction devices; yttrium compounds; 25 C; IR responsivity; PMSZT thin films; PMSZT/YBCO heterostructure; PZT; PZT:Mn,Sb-YBa2Cu3O7; PbZrO3TiO3:Mn,Sb-YBa2Cu3O7; Si; Y2O3(ZrO2); YBCO air-bridge; YSZ buffer layer; detectivity; dielectric properties; ferroelectric transition temperatures; high figure of merit; high pyroelectric coefficient; oxide thin film heterostructure IR detector; pyroelectric Mn/Sb doped-Pb(Zr,Ti)O3/YBa2Cu 3O7-y thin film heterostructure; pyroelectric properties; thermal isolation; Buffer layers; Dielectric thin films; Doping; Ferroelectric materials; Infrared detectors; Pyroelectricity; Semiconductor thin films; Temperature; Transistors; Yttrium barium copper oxide;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786669