DocumentCode
3077838
Title
Advances in quantum dot lasers for telecom and silicon photonics applications
Author
Arakawa, Yasuhiko
Author_Institution
Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
fYear
2012
fDate
2-6 July 2012
Firstpage
519
Lastpage
520
Abstract
We discuss recent advances in InAs/GaAs quantum dot lasers for telecom and silicon photonics applications. These include high temperature-stability with high speed modulation, commercialization by QD Laser Inc., and low-threshold quantum dot lasers on Si-substrates by a direct wafer bonding technique. Realization of single quantum dot lasers is also discussed.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; nanophotonics; optical modulation; quantum dot lasers; silicon; wafer bonding; InAs-GaAs; InAs/GaAs quantum dot lasers; QD Laser Inc; Si; Si-substrates; direct wafer bonding; high speed modulation; high temperature-stability; silicon photonics applications; telecom applications; Gallium arsenide; Laser theory; Quantum dot lasers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location
Busan
ISSN
2166-8884
Print_ISBN
978-1-4673-0976-9
Electronic_ISBN
2166-8884
Type
conf
DOI
10.1109/OECC.2012.6276551
Filename
6276551
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