Title :
High-speed high-performance vertical-illumination type 100% Ge-on-Si photodetectors for optical data communications
Author :
Kim, In Gyoo ; Kim, Sanghoon ; Jang, Ki-Seok ; Joo, Jiho ; Kim, Gyungock
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We present a high-speed high-responsivity vertical-illumination-type 100% Ge-on-Si photodetector (PD) based on silicon photonics technology. At λ=1550nm, the fabricated germanium photodetectors exhibit the responsivity of 0.92A/W, 0.73 A/W, and 0.45A/W for the data rate of 10Gbps, 25Gbps and 40Gbps, respectively. The devices show the -3dB bandwidth (f-3dB) up to 45GHz, and display good eye-openings up to 50Gbps data transmission. These results indicate the readiness of the Ge-on-Si PD for optical network communication applications.
Keywords :
elemental semiconductors; germanium; integrated optics; optical communication equipment; optical fabrication; photodetectors; Ge-Si; Ge-on-Si photodetectors; Si; bit rate 10 Gbit/s; bit rate 25 Gbit/s; bit rate 40 Gbit/s; data rate; data transmission; eye-opening diagrams; germanium photodetectors; high-speed high-performance vertical-illumination Ge-on-Si PD; optical data communications; optical network communication applications; silicon photonics technology; wavelength 1550 nm; Absorption; Data communication; High speed optical techniques; Optical device fabrication; Optical sensors; Photodetectors; Silicon;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
DOI :
10.1109/OECC.2012.6276555
