Title :
Growth of LiNbO3 thin films by bias sputtering
Author :
Nishida, T. ; Masuda, Y. ; Shiosaki, T.
Author_Institution :
Dept. of Electr. Eng., Hachinohe Inst. of Technol., Japan
Abstract :
Interest in the use of LiNbO3 thin films for piezoelectric and optical applications has increased. However it has been very difficult to prepare high-quality LiNbO3 films. In order to improve the quality, LiNbO3 films were prepared by bias sputtering, and the effects of bias electric field during the LiNbO 3 sputtering deposition were investigated. The deposition rate and Li/Nb composition of obtained films were greatly influenced by the bias field applied externally. The relationship between the bias voltage, the deposition rate and the composition was evaluated, revealing that both the rate and Li composition of the films were decreased at negative bias voltage. The oriented LiNbO3 films on SiO2/Si substrates may show fine piezoelectric and electric properties. However it has been very hard to grow oriented LiNbO3 films on SiO2. C-axis oriented LiNbO3 films were successfully obtained on SiO2/Si by bias sputtering. The as-grown oriented films also showed pyroelectricity. It was revealed that bias sputtering was very useful in the improvement of the crystallinity of LiNbO3 films
Keywords :
lithium compounds; piezoelectric thin films; pyroelectricity; sputter deposition; LiNbO3; Si; SiO2; SiO2/Si substrates; bias electric field; bias sputtering; bias voltage; c-axis oriented films; crystallinity; deposition rate; piezoelectric properties; pyroelectricity; thin films; Crystallization; Materials science and technology; Niobium; Optical films; Piezoelectric films; Polarization; Semiconductor films; Sputtering; Substrates; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786698
