Influence of interstitial oxygen on the c-axis orientation of sputtered and e-beam evaporated ZnO thin films

Author

Gupta, Vinay ; Sreenivas, K. ; Fahim, M.

Author_Institution

Dept. of Phys. & Astrophys., Delhi Univ., India

fYear

1998

fDate

1998

Firstpage

325

Lastpage

328

Abstract

The influence of interstitial oxygen on the microstructural and the electrical properties of sputtered and e-beam evaporated zinc oxide films has been investigated. The sputtered films are insulating and highly c-axis oriented, whereas the e-beam evaporated films are electrically conducting and polycrystalline with no preferred orientation. A post deposition annealing of the e-beam evaporated ZnO film in hydrogen dramatically enhanced the c-axis orientation as well as the electrical conductivity. Electron spectroscopy for chemical analysis (ESCA) indicates the presence of oxygen at the interstitial sites in e-beam film in appreciable amounts, and the post deposition annealing in hydrogen is found to reduce the interstitial oxygen considerably and enhance the c-axis orientation

Keywords

ESCA; II-VI semiconductors; annealing; electrical conductivity; electron beam deposition; insulating thin films; interstitials; semiconductor thin films; sputter deposition; zinc compounds; ESCA; ZnO; annealing; c-axis orientation; e-beam evaporated thin films; electrical conductivity; interstitial oxygen; polycrystalline films; sputtered thin films; Annealing; Conductive films; Dielectrics and electrical insulation; Optical films; Oxygen; Physics; Piezoelectric films; Semiconductor films; Sputtering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on

Conference_Location

Montreux

ISSN

1099-4734

Print_ISBN

0-7803-4959-8

Type

conf

DOI

10.1109/ISAF.1998.786699

Filename

786699