Optimization of microwave active filters based on cascaded composite GaAs FETs

Author

El-Shahat, I.A. ; Soliman, F.A.S. ; Al-Kabbani, A.S.S. ; Farag, F.M.

Author_Institution

Nucl. Mater. Authority, Cairo, Egypt

fYear

1996

fDate

19-21 Mar 1996

Firstpage

121

Lastpage

133

Abstract

The design, construction, and analysis of a microwave active filters all-or band-pass were described using the NE71083 GaAs FETs and lumped circuit components. In addition to optimizing the passive element values, it was necessary to replace each FET with the composite transistor to achieve a better flat frequency response. Besides, cascade networks were introduced for the design and construction of second-degree all-or band-pass filters for the realization of higher order filters. A computer-simulated design has illustrated the feasibility of the cascade composite GaAs FETs synthesis approach. Finally, illustrative examples were given for both filters

Keywords

III-V semiconductors; active filters; all-pass filters; band-pass filters; cascade networks; circuit CAD; circuit analysis computing; circuit optimisation; field effect MMIC; gallium arsenide; microwave filters; 6 to 12 GHz; GaAs; III-V semiconductors; MMIC; NE71083 FET; cascade networks; cascaded composite GaAs FET; composite transistor; computer-simulated design; filter optimization; flat frequency response; higher order filters; lumped circuit components; microwave active filters; passive elements; second-degree all-pass filters; second-degree band-pass filters; Active filters; Band pass filters; Frequency response; Gallium arsenide; MMICs; Microwave FETs; Microwave circuits; Microwave filters; Microwave frequencies; Microwave transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 1996. NRSC '96., Thirteenth National

Conference_Location

Cairo

Print_ISBN

0-7803-3656-9

Type

conf

DOI

10.1109/NRSC.1996.551424

Filename

551424