• DocumentCode
    3078490
  • Title

    Influence of K1+/La3+ co-modification on domain evolution and electrically-induced strains in lead zirconate titanate ferroelectric ceramics

  • Author

    Tan, Qi ; Li, Jie-Fang ; Viehland, Dwight

  • Author_Institution
    Johnson Matthey Electron. Inc., Spokane, WA, USA
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    377
  • Lastpage
    380
  • Abstract
    The influence of K1+ co-modification on the structure-property relationships of base PLZT 100y/65/35 ceramics has been investigated. For 4/65/35, K1+ modification resulted in a dramatic decrease (~10×) in the magnitude of the induced strain, the development of a pinned polarization and a dramatic reduction in domain size and change in domain morphology. For 7/65/35 with increasing K1+ concentration, only minor changes in the e-E response and a crossover between nanodomains and normal micron-sized domains occurred. For 12/65/35, significant increases in the magnitude of the induced strain were found, and an increase in the nanodomain size occurred. These results are discussed in terms of the influence of impurity/defect pinning sites and their distributions on domain stability and polarization switching
  • Keywords
    dielectric polarisation; electric domains; ferroelectric ceramics; ferroelectric switching; internal stresses; lanthanum compounds; lead compounds; potassium compounds; (PbLaK)ZrO3TiO3; K1+/La3+ co-modification; PLZT; PbLaZrO3TiO3; domain evolution; domain morphology; domain size; domain stability; electrically-induced strains; impurity/defect pinning sites; lead zirconate titanate ferroelectric ceramics; nanodomains; normal micron-sized domains; pinned polarization; polarization switching; structure-property relationships; Capacitive sensors; Ceramics; Dielectrics; Ferroelectric materials; Frequency measurement; Impurities; Inductance measurement; Lead; Polarization; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
  • Conference_Location
    Montreux
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-4959-8
  • Type

    conf

  • DOI
    10.1109/ISAF.1998.786712
  • Filename
    786712