• DocumentCode
    3078686
  • Title

    Nanometer control of the ferroelectric polarization in Pb(Zr0.2Ti0.8)O3 thin films

  • Author

    Tybell, T. ; Ahn, C.H. ; Foeth, M. ; Triscone, J.M.

  • Author_Institution
    Dept. de Phys. de la Matiere Condensee, Geneva Univ., Switzerland
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    431
  • Lastpage
    434
  • Abstract
    Using scanning probe microscopy and atomically smooth epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) thin films, we have investigated the possibility of controlling and modifying the ferroelectric polarization over large areas with submicron resolution. The films, which show a root-mean-square roughness of typically 2 A, could be uniformly polarized over areas as large as 2500 μm2 , and regular arrays of circular domains with a diameter of less than 100 nm, as well as lines with a width of 100 nm, could be written at arbitrary positions within the uniformly polarized areas. This local control of the polarization spans ten orders of magnitude in area and is ultimately limited by the sample size. We also report on studies of the intrinsic domain structure in films showing both c- and a-axis orientations. These films were characterized by transmission electron microscopy and X-ray diffraction. Local investigations of the ferroelectric properties were performed, and correlations between the microstructure and the ferroelectric properties are discussed
  • Keywords
    X-ray diffraction; atomic force microscopy; crystal microstructure; dielectric polarisation; electric domains; epitaxial layers; ferroelectric materials; ferroelectric thin films; lead compounds; nanostructured materials; surface topography; transmission electron microscopy; PZT; Pb(Zr0.2Ti0.8)O3 thin films; PbZrO3TiO3; X-ray diffraction; a-axis orientation; atomically smooth epitaxial Pb(Zr0.2Ti0.8)O 3 thin films; c-axis orientation; circular domains; ferroelectric polarization; intrinsic domain structure; lines; microstructure; nanometer control; regular arrays; root-mean-square roughness; scanning probe microscopy; submicron resolution; transmission electron microscopy; Atomic layer deposition; Ferroelectric films; Ferroelectric materials; Microstructure; Polarization; Scanning probe microscopy; Size control; Transistors; Transmission electron microscopy; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
  • Conference_Location
    Montreux
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-4959-8
  • Type

    conf

  • DOI
    10.1109/ISAF.1998.786724
  • Filename
    786724