Title : 
Direct observation of potential distribution across ferroelectric capacitor using off-axis electron holography
         
        
        
            Author_Institution : 
Integrated Mater. Lab., Fujitsu Labs. Ltd., Atsugi, Japan
         
        
        
        
        
        
            Abstract : 
Off-axis electron holography was used to observe the potential distribution across a ferroelectric PbZrx Ti1-x (PZT) capacitor and the surrounding electric field made by the spontaneous polarization of the polycrystalline PZT (poly-PZT) thin film. I succeeded in applying it to observations of ferroelectric capacitors. The electric potential has been visualized as the contour pattern corresponding to the equi-phase line of the incident electron beam, whose phase shift was due to the electric field of the PZT thin film. This is the first visualization of the poly-PZT thin film of a ferroelectric memory device by means of electron holography
         
        
            Keywords : 
dielectric polarisation; electric potential; electron holography; ferroelectric capacitors; ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; PZT; PbZrx Ti1-x capacitor; PbZrO3TiO3; contour pattern; electric field; electric potential; equi-phase line; ferroelectric capacitor; ferroelectric memory device; off-axis electron holography; phase shift; poly-PZT thin film; polycrystalline PZT; potential distribution; spontaneous polarization; thin film; Capacitors; Electron emission; Ferroelectric films; Ferroelectric materials; Holography; Interference; Polarization; Random access memory; Sputtering; Transistors;
         
        
        
        
            Conference_Titel : 
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
         
        
            Conference_Location : 
Montreux
         
        
        
            Print_ISBN : 
0-7803-4959-8
         
        
        
            DOI : 
10.1109/ISAF.1998.786732