Title :
Microwave device modelling for HBT CAD in mobile communications applications
Author :
Snowden, Christopher M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
A new electro-thermal physics-based equivalent circuit model for HBTs is described which is suitable for use in CAD of circuits intended for mobile communication applications. The multi-cell electro-thermal equivalent circuit model of an AlGaAs/GaAs HBT is described which is applied to the large-signal microwave characterization of 0.5 Watt power amplifiers for operation at 1.88 GHz. This highly efficient model, which incorporates a new multi-finger electro-thermal model, has been used to perform DC, small-signal and load-pull characterization and investigate parameter-spreads due to fabrication process variations
Keywords :
III-V semiconductors; aluminium compounds; circuit CAD; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power amplifiers; mobile communication; semiconductor device models; 0.5 W; 1.88 GHz; AlGaAs-GaAs; HBT; III-V semiconductors; circuit CAD; electro-thermal physics-based equivalent circuit; fabrication process variations; large-signal microwave characterization; load-pull characterization; microwave device modelling; mobile communications applications; parameter spreads; power amplifiers; small-signal characterization; Data mining; Design automation; Equivalent circuits; Fabrication; Heterojunction bipolar transistors; Microwave devices; Mobile communication; Power amplifiers; Power system modeling; Predictive models;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575788
