DocumentCode
3078875
Title
Switching kinetics of and electron emission from ferroelectric thin films
Author
Averty, D. ; Gundel, H. ; Seveno, R. ; Le Bihan, R.
Author_Institution
Lab. de Phys. des Surfaces, Nantes Univ., France
fYear
1998
fDate
1998
Firstpage
479
Lastpage
481
Abstract
With the aim to establish the conditions for integrating a ferroelectric electron emission system, and thus to develop a micro electron beam source, further studies on PZT thin films have been performed. In order to obtain a higher emission current density, we have modified the top electrode, and the switching of such structures is examined. Previous results, indicating the existence of a border effect, are confirmed, and we show a dependence of polarization inversion by an electric field on the electrode geometry. Latest results of the emission experiments with PZT thin films are presented, which equally prove the importance of fast polarization inversion for the appearance of intense electron emission
Keywords
current density; dielectric polarisation; electron field emission; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; PZT; PZT thin films; PbZrO3TiO3; border effect; electrode geometry; electron emission; emission current density; fast polarization inversion; ferroelectric electron emission system; ferroelectric thin films; intense electron emission; micro electron beam source; polarization inversion; switching kinetics; top electrode; Ceramics; Electrodes; Electron emission; Ferroelectric films; Ferroelectric materials; Geometry; Kinetic theory; Polarization; Pulse measurements; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location
Montreux
ISSN
1099-4734
Print_ISBN
0-7803-4959-8
Type
conf
DOI
10.1109/ISAF.1998.786736
Filename
786736
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