DocumentCode :
3079045
Title :
Properties of donor doped BaTi(Mn)O3+SiO2 sintered in reducing atmospheres
Author :
Spang, David I. ; Safari, Ahmad ; Burn, Ian
Author_Institution :
Dept. of Ceramics, Rutgers Univ., Piscataway, NJ, USA
fYear :
1998
fDate :
1998
Firstpage :
525
Lastpage :
528
Abstract :
Studies into the effect of trivalent (Ho, Nd, Y) and pentavalent (Nb, V) donor dopants on the material properties of BaTi(Mn)O3+SiO2 sintered under reducing conditions are presented. The effects of acceptor (Mn) concentration are also discussed
Keywords :
barium compounds; capacitance; permittivity; silicon compounds; sintering; BaTiMnO3-SiO2; acceptor concentration; capacitance; dissipation factor; donor doped sample; reducing atmosphere; sintering; Atmosphere; Capacitors; Coatings; Dielectric losses; Laboratories; Milling; Neodymium; Niobium; Powders; Stacking;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
ISSN :
1099-4734
Print_ISBN :
0-7803-4959-8
Type :
conf
DOI :
10.1109/ISAF.1998.786747
Filename :
786747
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3079045
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