DocumentCode :
3079202
Title :
Effects of additives on the sintering behavior of the Ni internal electrode of BaTiO3-based multilayer ceramic capacitors
Author :
Takahashi, Tctsuhiro ; Nakano, Yuichi ; Shoji, Hironari ; Matsushita, Haruhiko ; Ogawa, Hiroshi ; Onoe, Akira ; Kanai, Hideyuki ; Yamashita, Yohachi
Author_Institution :
R&D Dept., Chem.-Con Corp., Tokyo, Japan
fYear :
1998
fDate :
1998
Firstpage :
575
Lastpage :
578
Abstract :
The effects of additives on the sintering behavior of the Ni internal electrode of BaTiO3-based multilayer ceramic capacitors was investigated. The shrinkage and relative density of the Ni disk were measured at various temperatures between 800°C and 1300°C. The shrinkage of the Ni disk was dependent on the amount of additives. The relative density was as high as 98% after sintering at 1300°C, regardless of the amount of additives. The microstructures of the polished surface of the cross section and the surface of the fractured section of MLC were observed using a scanning electron microscope (SEM). The shrinkage ratios for the dielectric and the internal electrode were calculated from their thickness changes. The coating ratio of the internal electrode on the dielectric surface was also calculated
Keywords :
barium compounds; ceramic capacitors; crystal microstructure; density; ferroelectric capacitors; nickel; scanning electron microscopy; shrinkage; sintering; surface structure; 800 to 1300 C; BaTiO3-based multilayer ceramic capacitors; Ni; Ni internal electrode; Ni-BaTiO3; SEM; additives; coating ratio; dielectric surface; fractured section; microstructure; polished surface; relative density; shrinkage; shrinkage ratios; sintering behavior; Additives; Capacitors; Ceramics; Density measurement; Dielectrics; Electrodes; Nonhomogeneous media; Scanning electron microscopy; Surface cracks; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
ISSN :
1099-4734
Print_ISBN :
0-7803-4959-8
Type :
conf
DOI :
10.1109/ISAF.1998.786758
Filename :
786758
Link To Document :
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