• DocumentCode
    3079228
  • Title

    Electrooptic characterization of PLT28 thin films by a guided-wave optical technique

  • Author

    Dogheche, E. ; Boudrioua, A. ; Rémiens, D. ; Loulergue, J.C.

  • Author_Institution
    Lab. des Mater. Avances Ceramiques, Univ. de Valenciennes, France
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    585
  • Lastpage
    588
  • Abstract
    Transparent La-modified PbTiO3 (PLT28) thin films were deposited on sapphire substrates by rf magnetron sputtering for optical purpose. The influence of postdeposition annealing conditions on the optical properties of the films was investigated in this study. Guided optical wave techniques based on prism-coupling and optical transmission method were carried out to determine the dispersion of refractive indices. Furthermore, electrooptic (EO) effects of PLT28 thin films prepared with optimum annealing conditions were determined by a technique measuring the change of the resonant coupling angle in the experiment. The results have shown that the optical properties were strongly affected by the annealing process. The linear EO coefficient r13 obtained is about 55pm/V which is much larger than those of the well-known LiNbO3 material
  • Keywords
    annealing; electro-optical effects; ferroelectric materials; ferroelectric thin films; lanthanum compounds; lead compounds; light transmission; refractive index; sputtered coatings; PLT28 thin films; PbLaTiO3; electro-optic effects; electrooptic characterization; guided-wave optical technique; linear EO coefficient; optical properties; optical transmission; optimum annealing conditions; post-deposition annealing conditions; prism-coupling; refractive indices; resonant coupling angle; rf magnetron sputtering; sapphire substrates; transparent La-modified PbTiO3 thin films; Annealing; Couplings; Electrooptic effects; Optical films; Optical materials; Optical refraction; Optical variables control; Resonance; Sputtering; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
  • Conference_Location
    Montreux
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-4959-8
  • Type

    conf

  • DOI
    10.1109/ISAF.1998.786760
  • Filename
    786760